发明名称 High density integrated circuit pad structures
摘要 An integrated circuit with high density pad structures is provided. The circuit has circuitry covered by an insulating layer. Pads are formed on the insulating layer overlapping the circuitry. A pattern of holes in the insulating layer allows electrical connections to be formed between the pads and the underlying circuitry. Because the pads are formed on top of the circuitry, the die area occupied by pads is reduced relative to the die area occupied by circuitry. The pads are suitable for flip-chip bonding to a package such as a multichip module or conventional wire bonding.
申请公布号 US5834849(A) 申请公布日期 1998.11.10
申请号 US19960600339 申请日期 1996.02.13
申请人 ALTERA CORPORATION 发明人 LANE, CHRISTOPHER F.
分类号 H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/485
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