发明名称 |
Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions |
摘要 |
A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.
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申请公布号 |
US5834800(A) |
申请公布日期 |
1998.11.10 |
申请号 |
US19960610026 |
申请日期 |
1996.03.04 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
JALALI-FARAHANI, BAHRAM;KING, CLIFFORD ALAN |
分类号 |
H01L29/73;H01L21/265;H01L21/331;H01L29/165;H01L29/737;H03K3/286;H03K19/082;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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