Process for synthesis of cubic GaN on GaAs using NH3 in an RF plasma process

摘要

A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH3 to convert GaAs to GaN. Thermal assisted nitridation with NH3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.