Colossal magnetoresistance sensor

摘要

The present invention provides a colossal magnetoresistant sensor, and in particular a colossal magnetoresistant sensor capable of responding to the low fields emanating from the recording media. The recording media typically emanates a low field on the order of 20 Oe which is insufficient to result in a significant change in resistance in a CMR layer of material. The colossal magnetoresistant sensor is comprised of a first magnetic layer; a colossal magnetoresistant layer and a second magnetic layer, where the colossal magnetoresistant layer is positioned between the first magnetic layer and a second magnetic layer. The first and second magnetic layers surrounding the colossal magnetoresistant layer control the field through and therefore the resistance of the CMR layer. When the orientation of magnetization of the first and second magnetic layer are aligned parallel, the fields from the first magnetic layer and second magnetic layer add constructively to produce the large field needed (on the order of 5 Tesla) to produce a low resistance state. When the orientation of magnetization of the first field and the second field are aligned antiparallel, the fields from the first magnetic layer and the second magnetic layers add destructively to produce a high resistance state.