| 摘要 |
A method for pretreating a semiconductor surface, comprising the steps of: placing a titanium nitride substrate in a reaction chamber and subjecting the reaction chamber to vacuum; purging the reaction chamber with an inert gas selected from the group consisting of N2, Ar and He and evacuating the reaction chamber into 1 mTorr or lower; treating the surface of the titanium nitride substrate with a reaction gas comprising WF; charging a reducing gas and a source gas for deposition material to form a thin film on the titanium nitride substrate, by which the nucleation rate of deposition material and the number of nucleation sites on the substrate can be increased and a thin film with a uniform thickness and high density can be formed on the substrate.
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