| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject sintered compact capable of stably forming a ZnO-Ga2 O3 -based film with excellent characteristics without generation of any abnormal electric discharge, and to provide a method for producing the sintered compact at low cost including large-sized ones. SOLUTION: This sintered compact is such one that ZnO phase containing Ga in the form of solid solution is the main constitutional phase, and has the following properties: sintered density: >=5.2 g/cm<3> , volume resistivity: <=2×10<-2> Ω.cm, average crystal grain size: 2-10 μm, and maximum hole size: <=2 μm. This sintered compact is obtained by the following process: zinc oxide powder and gallium oxide powder each >=1 μm in average particle size are subjected to cold molding followed by sintering at 1,300-1,550 deg.C; wherein the rate of temperature rise within the temperature range between 1,000-1,300 deg.C in the middle of the sintering process is set at 1-10 deg.C/min. |
