| 摘要 |
PROBLEM TO BE SOLVED: To provide a continuous plasma CVD device capable of continuously forming film without generating damage or decomposition in a substrate. SOLUTION: The frequency of a high frequency bias is regulated to the range of 50 to 900 kHz, a blocking capacitor 12 in which C.F, i.e., the product of capacitance C and high frequency (f) is regulated to >=0.02 (F.Hz) is interposed between a high frequency power source and thin coating having electric conductivity, and, as the high frequency insulating properties of a substrate carrying system, the total of the impedances of all rolls in a path from a a roller 2 for feeding a substrate 1 to a rotary drum 3 is regulated to at least >=10 kΩ, and the total of the impedances of all rollers in a path from the rotary drum 3 to the coiling roller 4 is regulated to at least >=10 kΩ.
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