| 发明名称 |
Ferroelectric structure including MgTiO3 passivation |
| 摘要 |
An MgTiO3 film is used as a diffusion-barrier layer and/or a buffer layer for a ferroelectric film such as a PZT film. The MgTiO3 films may be used in ferroelectric capacitors which can be included in FRAM devices, and in ferroelectric floating gate transistors which can be included in FFRAM devices. Associated fabrication methods are also provided.
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| 申请公布号 |
US5834804(A) |
申请公布日期 |
1998.11.10 |
| 申请号 |
US19970951433 |
申请日期 |
1997.10.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, CHEOL-SEONG;LEE, CHOONG-HO |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/8247 |
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