发明名称 |
Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages |
摘要 |
A comb-shape MESFET assembly has a plurality of unit FETs including first, second and third groups of unit FETs. The pinch-off voltages of the unit FETs are different from group to group by a step difference. The different pinch-off voltages provide a tailored change in the third-order intermodulation distortion in the output of the MESFET assembly. The step differences in the pinch-off voltage is generated by different thicknesses or impurity concentrations of a semiconductor active layer, different gate length of the unit FETs or different types of stress in the gate insulator films. |
申请公布号 |
US5834802(A) |
申请公布日期 |
1998.11.10 |
申请号 |
US19970825052 |
申请日期 |
1997.03.27 |
申请人 |
NEC CORPORATION |
发明人 |
TAKAHASHI, HIDEMASA;MORIKAWA, JUNKO |
分类号 |
H01L27/095;H01L21/285;H01L21/338;H01L23/482;H01L29/10;H01L29/423;H01L29/812;(IPC1-7):H01L29/80 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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