| 摘要 |
PROBLEM TO BE SOLVED: To provide a cerium oxide abrasive material capable of polishing the surface of an SiO2 insulation film, etc., at a high speed to a flawless state. SOLUTION: An Si wafer having an SiO2 insulation film produced by TEOS- CVD method is polished with a slurry polishing agent produced by using cerium oxide particles containing >=90% particles having particle diameter of 20-1,500 nm measured by electron microscope observation based on the total number of the abrasive particles and containing >=90 vol.% of particles having particle diameter of 100-1,500 nm measured by electron microscope observation based on the total volume of the particles and dispersing the above particles in a medium. |
