Liquid crystal display device comprises a plurality of TFTs with a desirable channel length which reduces the resistance of the scanning lines

摘要

The present invention relates to the structure of an active matrix type liquid crystal display device in which a channel length of a thin film transistor without increasing resistance of a scanning line region to improve a switching characteristic. A slit is formed at the channel of the thin film transistor formed on the scanning line region. The slit is used as a mask and a pattern of a channel protection film for determining the channel of the thin film transistor is formed by exposure form a back surface of a substrate. According to this method, a desirable channel length can be obtained, and the scanning line region, facing to the channel through the slit, functions as an auxiliary region, so that the resistance of the scanning line region can be reduced.