| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ceramic composition baked at a low temperature, capable of being baked at 800-1,000 deg.C, having a low dielectric constant and a low dielectric loss tangent and capable of being easily controlled in a coefficient of thermal expansion in a high-frequency region of >=1 GHz and produce ceramics at the low temperature. SOLUTION: A ceramic comprising crystal shases W containing at least ZnO and SiO2 and SiO2 phases Q as main phases and crystal phases L containing at least SiO2 , LiO2 and ZnO as auxiliary phases and having characteristics such as <7 dielectric constant (εγ) at 1 GHz-60 GHz, <=30×10<-4> dielectric loss and 2-17 ppm/ deg.C coefficient of thermal expansion at room temperature to 400 deg.C is obtained by forming a composition comprising 14.0-95 wt.% of SiO2 , 1-84.5 wt.% of ZnO, 0.1-15 wt.% of B2 O3 and 0.1-10 wt.% of Li2 O, or 14.0-95 wt.% of SiO2 , 1-84.5 wt.% or ZnO, 0.1-10 wt.% of Li2 O, 0.5-20 wt.% of glass containing at least SiO2 and B2 O3 , and baking at 800-1,000 deg.C in an oxidizing or an non- oxidizing atmosphere. |
