Methods and systems for improving memory component size and access speed including splitting bit lines and alternate pre-charge/access cycles

摘要

A memory system having split logical bit lines and interleaved pre-charge/access cycles is provided. A bit line access circuit supports multiple conductors per logical bit line and pre-charges the conductors before access cycles thereto. The access cycles for one logical bit line are performed simultaneous with the pre-charge cycles for another logical bit line by the access circuit. Virtual reading is provided for eliminated memory cells. The memory system can be used in a programmable gate array having memory cells distributed throughout for programming respective programmable resources.