| 摘要 |
<p>A method for single crystal growth which comprises pulling a single crystal (6) by the CZ method from a starting melt (5) with a cusped magnetic field applied thereto. Regarding a crucible (3) for containing therein the starting melt (5), the inner diameter U is adjusted to (Y + 140 mm) to less than 3Y, wherein Y represents the outer diameter of the single crystal (6). In a state where the cusped magnetic field has been applied, a high pulling yield can be maintained even when the inner diameter U is reduced. Reducing the inner diameter U serves to improve the yields of oxygen and non-dislocation. This in turn can improve the yield of the preparation of the single crystal (6).</p> |
