发明名称 |
METHOD FOR SINGLE CRYSTAL GROWTH |
摘要 |
A method for single crystal growth which comprises pulling a single crystal (6) by the CZ method from a starting melt (5) with a cusped magnetic field applied thereto. Regarding a crucible (3) for containing therein the starting melt (5), the inner diameter U is adjusted to (Y + 140 mm) to less than 3Y, wherein Y represents the outer diameter of the single crystal (6). In a state where the cusped magnetic field has been applied, a high pulling yield can be maintained even when the inner diameter U is reduced. Reducing the inner diameter U serves to improve the yields of oxygen and non-dislocation. This in turn can improve the yield of the preparation of the single crystal (6).
|
申请公布号 |
WO9849378(A1) |
申请公布日期 |
1998.11.05 |
申请号 |
WO1998JP01975 |
申请日期 |
1998.04.30 |
申请人 |
SUMITOMO SITIX CORPORATION;IZUMI, TERUO |
发明人 |
IZUMI, TERUO |
分类号 |
C30B15/10;C30B15/30;C30B29/06;C30B30/04;H01L21/208;(IPC1-7):C30B15/10 |
主分类号 |
C30B15/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|