| 摘要 |
<p>A solid state image sensor comprises a number of photosensitive pixels. The photosensitive area of each pixel has one or more edge portions defined by isolation (31) separating the active area of the semiconductor substrate from other active areas thereof and the doping density of the impurity at the edge portion(s) of the photosensitive area is substantially restricted. A preferred embodiment is a CMOS photodiode sensor in which each pixel thereof includes a photodiode (20) formed by two N-type layers (33, 34) in a P-type substrate. The lower N-type layer (33) is more heavily doped than the upper layer (34) and the edges of the lower layer (33) are set back from the edges of the upper layer (34). A method of reducing dark-current leakage is also claimed involving the use of two or more different masks in the impurity doping process during manufacture of a solid state image sensor.</p> |
