MOSFET for testing voltage strength of wafer containing transistors

摘要

The MOSFETS, formed on a semiconductor wafer, have their voltage strength tested by a test MOSFET (4). The cross-section of aperture (3) in the field oxide (2) to form the test transistor and thus the cross-section of the source and drain regions (5, 6) varied along the width of the test transistor. The cross-section of the aperture in the field oxide is so varied that it comprises along the test transistor width all aperture cross-sections on the semiconductor wafer field oxide to form the MOSFETS. The aperture cross-section varies continuously and may be a maximum in the middle section along the test MOSFET width.