发明名称 |
Capacitors with silicized polysilicon shielding in digital CMOS process |
摘要 |
The present invention provides for a shielded capacitor in a digital CMOS fabrication process. The shield capacitor comprises a first surface (also known as a top plate) and a second surface (the bottom plate). The bottom plate has two portions which are connected, and the two portions of the bottom plate are positioned to sandwich the top plate in between the portions. A polysilicon layer is fabricated between the plates and the substrate of the semiconductor to isolate the plates from the substrate. To build the shielded capacitor, the polysilicon layer is fabricated first, then the plates are built on top of the polysilicon layer. The polysilicon layer is silicized and is often connected to the ground. |
申请公布号 |
EP0875944(A1) |
申请公布日期 |
1998.11.04 |
申请号 |
EP19980302843 |
申请日期 |
1998.04.14 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
LIU, EDWARD W.;WONG, SEE-HOI CAESAR |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8238;H01L27/06;H01L27/08;H01L27/092 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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