发明名称 MANUFACTURE OF PHOTOELECTRIC CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To maintain an improved texture structure and at the same time achieve a strong adhesion strength, a high reflection factor, and a low resistance simultaneously, by forming a lower electrode layer with two stages, namely, a first stage for forming film at a high temperature and a second stage for forming film at a lower temperature. SOLUTION: An aluminum electrode layer 13 is formed on an insulation substrate 12 by the DC sputtering method. A substrate temperature is set to 350 deg.C as conditions for DC sputtering. Then, a high-temperature silver electrode layer 14a is formed at a substrate temperature of 350 deg.C by the DC sputtering method and the substrate temperature is reduced to 200 deg.C, thus forming a low- temperature silver electrode layer 14b. After this, a semiconductor layer 15 that becomes a photoelectric conversion layer is formed. Then, a transparent electrode layer 16 that is an upper electrode layer is formed, thus reinforcing the adhesion strength between the electrode layer 13 and the silver electrode layer 14 in aluminum. Also, alloying is suppressed, the silver electrode layer 14 with a high reflection factor is achieved, and an improved texture structure when forming the first electrode layer is formed.
申请公布号 JPH10294483(A) 申请公布日期 1998.11.04
申请号 JP19970104128 申请日期 1997.04.22
申请人 FUJI ELECTRIC CORP RES & DEV LTD 发明人 WADA KATSUHITO
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址