| 摘要 |
<p>The present invention provides a method of simulating a process for oxidation of silicon. The method comprises the following steps. A time "t" of oxidation calculation is set at zero. An effective surface oxidant concentration of a silicon surface exposed to an oxygen atmosphere is calculated assuming that a spontaneous silicon oxide film as an initial silicon oxide film extends over the silicon surface. The time "t" of oxidation calculation is forwarded by a predetermined time increment DELTA t. An oxidation rate is calculated by use of one of the effective surface oxidant concentration and the surface oxidant concentration. A new silicon surface is formed based upon the calculated oxidation rate and the time increment DELTA t. Variations in thickness of the silicon oxide film over time are found by a deformation calculation. There is verified whether or not the time "t" of oxidation calculation reaches a predetermined end time so that if the time "t" of oxidation calculation reaches the predetermined end time, then a current simulation is ended, whilst if the time "t" of oxidation calculation does not reach the predetermined end time, then an oxidant diffusion equation is solved for a deformed silicon oxide film to calculate the surface oxidant concentration of the silicon surface to be oxidized. A loop comprising the sequential third to seventh steps is repeated until the time "t" of oxidation calculation reaches the predetermined end time. <IMAGE></p> |
