| 摘要 |
PROBLEM TO BE SOLVED: To realize high performance by providing a semiconductor thin film with at least two crystals and intercrystal grain boundary and making the ratio of mismatching bond to all the bonds in a grain boundary not more than a specified ratio. SOLUTION: Crystallization of an amorphous silicon film 102 proceeds precedably from addition regions 105, 106 whereto nickel is added and lateral growth regions 107, 108 which are formed almost parallel to a board surface of a board 101 are formed. The lateral growth regions 107, 108 alone are used as an active layer. According to a TEM picture wherein a crystalline silicon film of the lateral growth regions 107, 108 is enlarged, in a crystalline structure thereof, lattice stripes are continuously connected with each other in grain boundary while crystals are different from each other and crystal lattice matching is good. Furthermore, mismatching bond exists just at 5% or less to all the bonds existing in the grain boundary. It is considered that an angle formed by two crystal lattice stripes is in the range of 60 to 80 deg. (or 100 to 120 deg.). |
