| 摘要 |
PROBLEM TO BE SOLVED: To reduce the difference between the electric capacities of a ferroelectric film and a gate insulating film in an MFMIS(metal/ferroelectric/ metal/insulator/semiconductor) type semiconductor storage element using the ferroelectric film. SOLUTION: A semiconductor storage element has an electrode structure which is formed by successively forming a gate oxide film 12, a lower electrode (constructed in a three-layer structure of a poly-Si(polycrystalline silicon) film 14, an Ru(ruthenium) film 16, and an RuO2 (ruthenium oxide) film 18), a BIT (bismuth titanate) film 22, and an upper electrode 24 on an Si substrate 10. In addition, a side wall 26 is partially provided on the surface of the lower electrode 20 on the BIT film 22 side so that the side wall 26 may be brought into contact with the side faces of the films 16, 18, and 22 and the electrode 24. In addition, the sum of the areas of the part of the electrode 20 which is in contact with the side wall 26 and the part of the electrode which is in contact with the BIT film 22 is made substantially equal to the area of the part of the electrode 20 which is in contact with the gate oxide film 12. |
