发明名称 |
Nitride semiconductor device |
摘要 |
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer (16) of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer (101) having a band gap energy larger than that of the active layer (16) is provided in contact with the active layer (16). A second nitride semiconductor layer (102) having a band gap energy smaller than that of the first layer (101) is provided over the first layer (101). Further, a third nitride semiconductor layer (103) having a band gap energy larger than that of the second layer (102) is provided over the second layer (102). |
申请公布号 |
EP0772249(A3) |
申请公布日期 |
1998.11.04 |
申请号 |
EP19960117792 |
申请日期 |
1996.11.06 |
申请人 |
NICHIA CHEMICAL INDUSTRIES, LTD. |
发明人 |
NAKAMURA, SHUJI;NAGAHAMA, SHINICHI;IWASA, NARUHITO |
分类号 |
H01L33/02;H01L33/06;H01L33/32;H01S5/20;H01S5/343 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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