| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which formation of a sidewall spacer is simplified so as to be completed in one operation, when a fine MOS transistor having a gate length about 0.1μm is formed using an aligner of low resolution of about 0.5μm. SOLUTION: This manufacturing method contains a process in which an oxide film 101 and a nitride film 102 are formed on a P-type silicon and then a channel region is opened to form a thick oxide film 101' in an opening part of a semiconductor substrate on which a sidewall spacer 103' is formed, a process in which an N<+> impurity region 104 is selectively formed on a thin part of the oxide film by ion implantation, a process in which the opening part of the oxide film is etched with the sidewall spacer as a mask to selectively form a P-impurity region 105 on the channel region, and a process in which a silicon nitride film and the sidewall spacer are selectively removed by wet etching to form a gate oxide film 106, and then a polycrystalline silicon film formed in a CVD manner is pattern to form a gate electrode 107.
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