SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To maintain reliability of a semiconductor integrated circuit by eliminating malfunctions caused by entrance of moisture from outside due to SOG solution coating. SOLUTION: Lower substrate wirings 6 formed on a first wiring layer of a semiconductor chip 5 are arranged around the perimeter of the semiconductor chip 5 near a scribe line area 8. Spaces 1 are provided between adjacent lower substrate wirings 6 for letting SOG solution escape outside. The lower substrate wirings 6 are connected to upper substrate wiring layer through through hole contacts. When the SOG solution is applied, residual SOG solution is drained out through the spaces 1. In this way, corrosion of wirings caused by penetration of moisture into the through hole contacts due to the silicon oxide film by residual SOG solution on parts with different levels of the lower substrate wirings 6 is prevented and function and reliability of the semiconductor integrated circuit is maintained.