| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon-based thin film photoelectric converter in which grain boundaries and crystal defects are reduced in crystalline silicon-based thin film photoelectric conversion layers formed by using low-temperature processes of the plasma CVD method, thereby improving photoelectric conversion characteristics. SOLUTION: A silicon-based thin film photoelectric converter comprises a substrate 101 and at least one photoelectric converter unit 111 formed on the substrate 101. The photoelectric converter unit 111 comprises a semiconductor layer of one conductivity type 104, a silicon-based thin film photoelectric conversion layer 105 containing of crystalline materials, and a semiconductor layer of the opposite conductivity type 106 laminated in this order by the plasma CVD method. The one conductivity type semiconductor layer 104 includes an amorphous silicon-based thin film which contains not less than 0.01 at% of conductivity deciding impurity atoms, and this amorphous silicon-based thin film is in direct contact with the photoelectric conversion layer 105. |
