A nitride semiconductor light-emitting device has an active layer (14) of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer (61) made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer (62) made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer (62) has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer (13) is provided in contact with the other surface of the active layer (14). <IMAGE>
