| 摘要 |
PROBLEM TO BE SOLVED: To form a gate electrode with a single-layer film, by allowing a metal insulator - semiconductor transistor to have a gate dielectric layer, a gate electrode, and a current electrode region. SOLUTION: A field isolation region 18 is formed on a semiconductor device substrate 12, and a gate dielectric thin-film layer 20 is formed on the substrate 12. A metal semiconductor nitride film 26 is positioned on the field isolation region 18 and the gate dielectric layer 20. A resist layer is added onto the metal semiconductor nitride film 26 and is subjected to patterning, thus forming a gate electrode 40. After the gate electrode 40 is formed, a doped region 42 is formed in the substrate 12 that is adjacent to the gate electrode 40. The doped region 42 becomes the source/drain region (current electrode) of a transistor. Therefore, the gate electrode can be formed simply by depositing a single- layer film. |
