发明名称 Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring
摘要 A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10 DEG C. or lower, and more preferably, at 0 DEG C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.
申请公布号 US5830786(A) 申请公布日期 1998.11.03
申请号 US19960654030 申请日期 1996.05.28
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG, HONGYONG;UOCHI, HIDEKI;YAMAZAKI, SHUNPEI;TAKEMURA, YASUHIKO;MIYAZAKI, MINORU;MURAKAMI, AKANE;KONUMA, TOSHIMITSU;SUGAWARA, AKIRA;UEHARA, YUKIKO
分类号 H01L21/02;H01L21/28;H01L21/3213;H01L21/336;H01L21/76;H01L29/49;(IPC1-7):H01L21/321 主分类号 H01L21/02
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