发明名称 |
Process for fabricating electronic circuits with anodically oxidized scandium doped aluminum wiring |
摘要 |
A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10 DEG C. or lower, and more preferably, at 0 DEG C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.
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申请公布号 |
US5830786(A) |
申请公布日期 |
1998.11.03 |
申请号 |
US19960654030 |
申请日期 |
1996.05.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG, HONGYONG;UOCHI, HIDEKI;YAMAZAKI, SHUNPEI;TAKEMURA, YASUHIKO;MIYAZAKI, MINORU;MURAKAMI, AKANE;KONUMA, TOSHIMITSU;SUGAWARA, AKIRA;UEHARA, YUKIKO |
分类号 |
H01L21/02;H01L21/28;H01L21/3213;H01L21/336;H01L21/76;H01L29/49;(IPC1-7):H01L21/321 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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