| 摘要 |
A low voltage electro-static discharge protective device includes a field oxide layer on a substrate, source/drain regions beside the field oxide layer in the substrate, and a threshold voltage adjustment region under the field oxide layer. The fabricating of the protective device includes forming a pad oxide layer and a silicon nitride layer on a substrate, etching the silicon nitride layer to form an opening, forming a oxide spacer on the exposed portion of the pad oxide layer around the periphery of the opening, implanting ions into the substrate, forming a field oxide layer in the opening so that the certain type of ions form a threshold voltage adjustment region under the field oxide layer, removing the silicon nitride layer, removing the exposed pad oxide layer, and forming source/drain regions beside the field oxide layer.
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