| 摘要 |
In a dynamic random access memory, a sense amplifier has direct sense circuitry (MNRD, MNRD-, MNYSR, MNYSR-, MNYSW, MNYSR-) included therewith to minimize the effect of the parasitic impedances of the local INPUT/OUTPUT lines RES-LIO, RES-LIO-). The WRITE-ENABLE signal and the READ-ENABLE signal are each combined with the Y-SELECT signal to provide a Y-SELECT-READ and a Y-SELECT-WRITE signal. Each of these two signals, along with their complementary logic signals, control a transistor pair (MNYSR, MNYSR-; MNYSW, MNYSR-) in the direct sense circuitry, coupling the sense amplifier and the local INPUT/OUTPUT lines (RES-LIO, RES-LIO-). Because the original signal set had three enabling signals (along with their complements), the present implementation eliminates a transistor pair in the direct sense circuitry.
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