发明名称 |
High-efficiency charge pumping circuit |
摘要 |
A high-efficiency charge pumping circuit includes an oscillator for generating a predetermined cycle of pulse voltage; a first booster capacitor unit for storing an output of the oscillator at a high level, and outputting an output when the output of the oscillator is at a low level; a first clamp unit for maintaining the output of the first booster capacitor unit at a predetermined level; a second clamp unit for maintaining the output of the first booster capacitor unit at a predetermined level; a double-booster circuit for performing a double-boosting of an output signal of the oscillator and then outputting the double-boosted output signal as an output of the double-booster circuit; a second booster capacitor unit for temporarily storing an output voltage of the double-boosted circuit and for outputting the temporarily stored voltage to the second clamp unit; an output transistor for receiving a voltage greater than a predetermined level from the double-booster circuit, and for completely outputting a voltage input from the first clamp unit; a voltage holding transistor for receiving an internal voltage, and for outputting a voltage signal to an output node; a clipper for interrupting a threshold voltage of the output transistor when a voltage of the output transistor is above a predetermined voltage; and a storage capacitor for temporarily storing a voltage of the voltage holding transistor.
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申请公布号 |
US5831470(A) |
申请公布日期 |
1998.11.03 |
申请号 |
US19960697668 |
申请日期 |
1996.08.28 |
申请人 |
LG SEMICON CO., LTD |
发明人 |
PARK, JIN SUOG;KIM, TAE HOON |
分类号 |
G11C11/407;H02M3/07;H03F3/70;H03K5/02;H03K19/094;(IPC1-7):G05F1/10 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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