Selective patterning of metallization on a dielectric substrate

摘要

A method of selectively fabricating metallization on a dielectric substrate is disclosed. A seed layer is sputtered on a polymer dielectric, a patterned photoresist mask is disposed over the seed layer, exposed portions of the seed layer are etched, the photoresist is stripped, and copper is deposited without a mask by electroless plating on the unetched seed layer to form well-adhering high density copper lines without exposing the photoresist to the electroless bath.