Werkwijze voor het verhinderen van de vorming van ionenimplantatie-geïnduceerde randeffecten.

摘要

The method for implanting ions into a substrate (132) involves determining a desired uniform surface layer (128) thickness through which implantation can be carried out in order to minimise defect formation. A surface layer is provided with the desired surface layer thickness. Ions are implanting into the substrate through the surface layer. The substrate is provided with a concave shaped surface region (130). The surface layer is provided with a concave shaped surface portion. Ions are implanted into the substrate through the concave shaped surface portion and the concave shaped surface region. The substrate includes silicon and the substrate surface is implanted through is a (100) crystallographic plane. A conducting material is provided as the surface layer.