| 发明名称 |
Thin film transistor |
| 摘要 |
A thin film transistor of this invention includes: a source and drain regions formed on an insulating base region; and a conductive layer connected to the source and drain regions. The conductive layer has a layered structure of an Al-containing metal film and an N-containing Mo film.
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| 申请公布号 |
US5831281(A) |
申请公布日期 |
1998.11.03 |
| 申请号 |
US19960757765 |
申请日期 |
1996.11.27 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KUROGANE, SAORI;SAKAMOTO, HIROMI |
| 分类号 |
G02F1/136;G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L23/532;H01L29/45;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/136 |
| 代理机构 |
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