| 摘要 |
A semiconductor device comprising a silicon-series material layer and a laminate structure formed on the silicon-series material layer, the laminate structure being composed of a refractory metal thin film and/or a refractory metal silicide thin film, wherein a content of a halogen atom in each of the refractory metal thin film and/or the refractory metal silicide thin film is 1% by weight or less based on an amount of each of the refractory metal thin film and/or the refractory metal silicide thin film. In accordance with the present invention, there is also provided a process of producing such a semiconductor device.
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