| 摘要 |
A laminated structure formed by alternately laminating a silicon film and a silicon oxide film is successively etched in the same chamber. Two groups are selected from groups A, B, and C, the group A including NF3, CF4, and SF6, the group B including CO, CHF3, CH2F2, C2F6, C3F8, and C4F8, and the group C including Cl2, HBr, HCl and Br2. The laminated structure is etched by successively etching one of the silicon film and the silicon oxide film by a combination of gases having a first mixture ratio and the other by the combination of gases having a second mixture ratio different from the first mixture ratio, the combination of gases including at least one kind of gas selected from one group of the selected two groups and at least one kind of gas selected from the other group. A technology of manufacturing a semiconductor device is provided which can etch an alternate laminate efficiently with a simple system.
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