发明名称 Circuit and method for varying a period of an internal control signal during a test mode
摘要 The invention is a dynamic random access memory (DRAM) device having an electronic test key fabricated on board and is a method for testing the DRAM. The electronic test key generates a signal which effects a variation in a period of an internal control signal to stress the DRAM during a test mode.
申请公布号 US5831918(A) 申请公布日期 1998.11.03
申请号 US19960663939 申请日期 1996.06.14
申请人 MICRON TECHNOLOGY, INC. 发明人 MERRITT, TODD A.;ZAGAR, PAUL S.
分类号 G11C29/02;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C29/02
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