发明名称 |
Pattern lithography method |
摘要 |
It is an object of the present invention to obtain a resist pattern of a high dimensional accuracy. In order to accomplish this object, a pattern lithography method according to the present invention comprises the steps of: forming a resist film 2 on a substrate 1 to be processed; applying a hydrous polymer solution 4 on the resist film 2; cross-linking polymers in the hydrous polymer solution to form a hydrogel film 4a of a predetermined thickness; and pattern-exposing the resist film 2 through the hydrogel film, and then, removing the hydrogel film 4a.
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申请公布号 |
US5830623(A) |
申请公布日期 |
1998.11.03 |
申请号 |
US19960715375 |
申请日期 |
1996.09.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MARUYAMA, YUMIKO;IKEDA, TAKAHIRO |
分类号 |
G03F7/11;G03F7/09;G03F7/16;G03F7/38;H01L21/027;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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