摘要 |
A semiconductor memory cell has a semiconductor substrate, an active region disposed on the semiconductor substrate and having two impurity regions, a gate electrode disposed on the active region, a field region isolated from the active region on the semiconductor substrate and having a contract hole, a capacitor disposed over the active region and field region on the semiconductor substrate, and a buried region disposed under the field region and the bit line contacting the first impurity region through the contact hole.
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