| 发明名称 |
Semiconductor device having an element isolating oxide film and method of manufacturing the same |
| 摘要 |
There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that tG represents a thickness of a gate electrode layer 6, a height tU to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle theta i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of { theta i, tU +543 0</= theta i</=56.6 DEG , 0</=tU</=0.82tG}. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode. This prevents shaving of the gate insulating film and the underlying substrate surface.
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| 申请公布号 |
US5831323(A) |
申请公布日期 |
1998.11.03 |
| 申请号 |
US19960601662 |
申请日期 |
1996.02.14 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MOTONAMI, KAORU;SHIRATAKE, SHIGERU;MATSUO, HIROSHI;YOKOYAMA, YUICHI;MORISAWA, KENJI;GOTODA, RITSUKO;MURAKAMI, TAKAAKI;HAMAMOTO, SATOSHI;YASUMURA, KENJI;ITOH, YASUYOSHI |
| 分类号 |
H01L21/316;H01L21/76;H01L21/762;H01L21/8234;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/316 |
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