Method of programming a memory cell to contain multiple values

摘要

A method for programming multiple values in an individual flash memory cell is disclosed. An individual flash cell is programmed by holding the bit line, corresponding to the particular memory cell to a value, Vd, while the voltage on the control gate, Vg, of the memory cell is varied. By varying the voltage on the control gate, multiple values are stored in the memory cell. The resulting values are self-convergent, therefore, verify circuitry becomes unnecessary.