| 摘要 |
A semiconductor laser device has a GaAs substrate (11), a single- or multiple-quantum well (QW) structure including at least one InGaAs strained QW active layer (16), a pair of GaAsP or InzGa1-zAsP barrier layers (15,17) (z</=0.3) interposing therebetween the QW structure, and a pair of AlGaAs cladding layers (13, 19) sandwiching the pair of barrier layers (15,17) and the QW structure as a whole. The semiconductor laser prevents a catastrophic optical damage (COD) caused by recombination current due to the presence of aluminum and exhibits a high optical output power.
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