| 摘要 |
Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga1-xAlxAs layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped InyGa1-yAs layer, an undoped GaAs1-zSbz layer, a superlattice layer which includes an undoped InyGa1-yAs layer and an undoped GaAs1-zSbz layer, a superlattice layer which includes an undoped InyGa1-yAs layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs1-zSb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.
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