| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the clogging of the polishing cloth used in CMP securely and to prevent the occurrence of damages. SOLUTION: In the process for polishing a semiconductor water with polishing agent being flowed in a polishing cloth 7 in a semiconductor wafer, ice is included in the solid component of the polishing agent. Furthermore, the ice remaining at a vacuum part 9 at the surface of the polishing cloth 7 is melted by heating the polishing cloth 7 after the polishing is finished. Thus, the stable control of the polishing amount is performed, and the damage occurring in the semiconductor wafer is prevented. In this way, the reduction in yield is prevented. |
