| 摘要 |
PROBLEM TO BE SOLVED: To stably grow a gallium nitride based compound semiconductor with a good yield by improving the crystallivity and the surface morphology of the gallium nitride based compound semiconductor grown on a buffer layer to a practical level. SOLUTION: In a reactor in which a gallium nitride based compound semiconductor is grown by an organometallic compound vapor-phase growth method, a buffer layer of Gax Al1-x N (where 0.5<=X<=1) of not more than 0.2 μm thick is grown at a temperature lower than the growth temperature of the gallium nitride based compound semiconductor before the gallium nitride based compound semiconductor is grown and then the gallium nitride based compound semiconductor having the same composition as the buffer layer is grown at a growth temperature higher than that of the buffer layer. |
