METHOD FOR FORMING THE LDD STRUCTURE OF ACTIVE PART OF LDP THIN FILM TANSISTOR,申请号KR19950015440-传众专利搜索

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发明名称	METHOD FOR FORMING THE LDD STRUCTURE OF ACTIVE PART OF LDP THIN FILM TANSISTOR
摘要
申请公布号	KR0146202(B1)	申请公布日期	1998.11.02
申请号	KR19950015440	申请日期	1995.06.12
申请人	SAMSUNG ELECTRONICS CO.,LTD	发明人	NAM, BYUNG-YUN;LEE, SANG-WON;KIM, JIN-HONG
分类号	H01L21/336;H01L29/786;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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