发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CONTACT
摘要 <p>A method for forming contact holes in a semiconductor device, involving formation of a ring-shaped pad at a contact region. The ring-shaped pad is used as an etch barrier film upon forming a contact hole. The use of such a ring-shaped pad enables easy formation of a contact hole with a critical dimension. In accordance with this method, it is possible to increase a process margin upon the formation of contact holes for providing contacts with a critical dimension while maintaining an insulation between neighboring conductors.</p>
申请公布号 KR0146246(B1) 申请公布日期 1998.11.02
申请号 KR19940024221 申请日期 1994.09.26
申请人 HYUNDAI ELECTRONICS IND.CO.,LTD 发明人 PARK, CHAN-KWANG;KO, YO-HWAN;HWANG, SUNG-MIN
分类号 H01L21/28;H01L21/768;(IPC1-7):H01L21/28 主分类号 H01L21/28
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