STACKED INSULATING FILM INCLUDING YTTRIUM OXIDE

摘要

A capacitor, and a method for making the same, are disclosed, wherein one plate (4) of the capacitor comprises silicon. The dielectric material of the capacitor includes a silicon nitride layer (6) disposed adjacent the silicon plate (4), and a layer of yttrium oxide (8) disposed thereover. The second plate (10) of the capacitor is formed over the yttrium oxide layer (8). The silicon nitride (6) provides a barrier to the diffusion of silicon into the yttriun oxide film (8) if the structure is heated, providing for a high dielectric constant capacitor dielectric which has improved leakage characteristics.