| 摘要 |
The control method can be used for an array (P1 - P25) of photodiodes (Dp). Before being exposed to a light signal during the image gathering phase, the photodiodes are reverse biased by an initial bias voltage having a first value (VA3). A second bias voltage value (Vrp) is applied only to those photodiodes for which the initial reverse bias has been reduced beneath a limit value (vlin) by a very strong exposure during the image gathering phase. During the reading phase which follows the image gathering phase, this avoids the strongly exposed photosensitive points producing strong parasitic currents which may otherwise be detected with the reading of the normally exposed points.
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